Lead Principal Engineer GaN IC Development (f / m / div)

Lead Principal Engineer GaN IC Development (f / m / div)

ID : HRC

Part of your life. Part of tomorrow. We make life easier, safer and greener, with technology that achieves more, consumes less and is accessible to everyone. Microelectronics from Infineon is the key to a better future in power semiconductor technology.

Responsibilities

• Technically lead the development of the new GaN platform technology.
• Coordinate project activities from process definition to system integration.
• Develop new technology and device concepts for pGaN based HEMT.
• Develop FEOL and BEOL integration schemes in the 300mm GaN line.
• Lead design activities of the technology test chip and support lead product development.
• Work in an international and multi-site team of passionate and experienced development engineers.
• Collaborate closely with application engineering and TCAD concept team to derive functional requirements and define technology specifications.
• Collaborate closely with wafer fab unit process development and process integration engineers to develop new unit processes and process blocks.
• Act as interface to Product Line and R&D management to provide technical advice for management decisions.

Qualifications

Benefits

We offer competitive salaries and additional benefits based on your performance, experience and qualification. The monthly salary is paid 14 times per year. We offer a higher compensation depending on your expertise and skills.

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